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Lateral power semiconductor switch
Background A majority of power devices are Si MOSFET or IGBT. Wide band gap (WBG) material based devices are posed to replace Si MOSFET and IGBT in the future. Silicon Carbide (SiC) and Gallium Nitride (GaN) are the two most matured materials, with SiC considered the more promising of the two. Today, SiC power MOSFET is made vertically; GaN is made...
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